• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of manufacturing diaphragms which are sensitive to fluoride ions, by depositing a poly-crystalline thin layer of difficulty soluble fluoride of 20 nm to 5,000 nm thick by means of sputtering or vaporization onto a substrate at temperatures of above 280 DEG C.
    公开号:SU1702280A1
    申请号:SU857773904
    申请日:1985-07-15
    公开日:1991-12-30
    发明作者:Фаит Мартин；Гюнтер ТОМАС；Яниец Петер；Мориц Вернер；Мюллер Лотар；Веллнер Ханс
    申请人:Фэб Вашгерэтеверк, Шварценберг (Инопредприятие)；
    IPC主号:
    专利说明:

    The invention relates to methods for producing a fluoride sensitive membrane for use as an ion sensitive electrode in the practice of electroanalytical measurements.
    In the case of using a single crystal LaFs electrode, the single crystal is embedded in a tube of non-conductive material. An electrolyte solution containing fluoride ions is introduced into this tube and contact is made with the reference electrode. When using such an internal solution for the reference electrode, the manufacture of electrodes is complicated and defects often occur. Obtaining single crystals is very difficult, so their cost is high. Attempts to remove the potential from a single crystal of aRz were undertaken using an Ag / AgF contact. The manufacture of such solid-state contact by welding in an inert gas medium is also very difficult to take place and, moreover, does not allow refusing
    from single crystals. Recently, attempts have been made to eliminate these disadvantages by spraying LaFa onto polycrystalline printing conductors connected to the gate area of the scoring transistor, with the entire structure except for the fluorosensitive area being covered with a photo light.
    The disadvantage of this technical solution is an extremely strong potential drift, which excludes any practical application, as well as an unsatisfactory detection limit.
    The goal of isotope is to simplify the manufacture of fluorosensitive membranes.
    This goal is achieved by the fact that the membrane is obtained by thermally or ion-beam spraying a polycrystalline thin layer of a poorly soluble fluoride, s in particular rare earth fluoride or their mixture onto a suitable subfamily &
    about
    Fo
    00
    about
    a spoon. The best results and extreme sensitivity detection of F ions can be achieved through the use of LaFs. Unlike single crystal electrodes, doping is not necessary to improve conductivity due to the insignificant thickness of the sprayed layer. The thickness of the sensitive membrane layer should be from 20 to 5000 nm. The optimum substrate temperature during membrane fabrication is above 280 ° C. A large number of different materials can be used for the substrate, provided that their surface is of good quality. The average irregularity height of the substrate profile should not exceed 50 nm to ensure membrane homogeneity and thereby eliminate potential instability. The boundary layer to the membrane may be formed by a metal, its salt, semiconductor, or insulator. In addition, the substrate may have a structure consisting of several layers of these materials. To ensure the functioning of the membrane, the spraying rate was an important parameter. Sputtering rates below 0.5 nm provide good reproducible results. The membrane manufactured under these conditions, with a clearly defined polycrystalline structure, has a sensitivity that fully corresponds to that of a single-crystal electrode,
    The proposed method allows to obtain a fluorosensitive membrane that does not need an internal comparison solution for removal of potential and makes it possible to measure the change in potential due to the substrate at the interface: the measured solution is a membrane. Potential removal is simplified by the participation of only solid components in contact. If the boundary layer is a metal or a conductive compound, then the activity of fluoride ions in the solution can be determined directly, the potential in the circuit is measured: the reference electrode — the test solution — membrane — substrate. The membranes manufactured are characterized by a sensitivity of 57 mV per decade up to concentrations of fluoride ions of less than 10 mol / l. The selectivity is the same as that of LaFs single crystals. Long-term stability is characterized by very low potential drift. According to the proposed method, it is possible to manufacture fluorosensitive membranes using low cost.
    technology suitable for mass production. These membranes can be used in both continuous and discrete analysis of fluoride ions. An example of the method.
    A layer of gold 10Q.HM thick was deposited on a polished silicon wafer (110) and, at a temperature of 280 ° C, a layer of 270 nm thick LaFa was deposited on the gold by thermal evaporation, and the deposition rate was maintained at 0.5. A 6 x 6 mm2 square was cut out of the plate, and the gold layer was joined by silver lacquer with a contact made of brass wire. This structure is pasted on the prepared
    teflon cylinder epoxy such that only a layer of LaFs remains open. The electrode is introduced into solutions with different concentrations of fluoride ions. The following potentials were obtained in the circuit (reference electrode - calomel).
    Thus, the proposed method allows to simplify the manufacture of fluoride-selective electrodes.
    权利要求:
    Claims (2)
    [1]
    1. Method of making a membrane of a fluoride-selective electrode in the form of a thin layer from 20 to 5000 nm using
    lanthanum fluoride, which is deposited in a polycrystalline form on a substrate by thermal evaporation or high-frequency ion sputtering, characterized in that lanthanum fluoride is precipitated
    on a substrate whose temperature is above 200 ° C.
    [2]
    2. A method according to claim 1, characterized in that lanthanum fluoride is deposited on a substrate whose temperature is maintained
    in the range of 280-350 ° C.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP0192760A1|1986-09-03|Ion selective electrode.
    EP0386119A1|1990-09-12|Microelectrochemical devices and method of detecting
    WO2005015193A1|2005-02-17|Field-effect transistor, sensor using it, and production method thereof
    SU1702280A1|1991-12-30|Method of manufacturing fluoride-selective electrode membrane
    Corcoran et al.1994|An in-situ STM investigation of the underpotential deposition of Ag on Au | electrodes
    EP0472398B1|1997-01-02|Electrode for measuring pH and method for manufacturing the same
    EP0160997B1|1991-08-07|Ion selective electrode
    US6908538B2|2005-06-21|Electrochemical gas sensor having a porous electrolyte
    US20050194252A1|2005-09-08|Electrochemical sensor having nonporous working electrode
    US4266335A|1981-05-12|Method of producing electrochromic display device
    US4810529A|1989-03-07|Method of producing a miniature internal reference gas chamber within an automotive, internal reference, solid electrolyte, lean oxygen sensor
    O'Halloran et al.1997|A bulk micromachined humidity sensor based on porous silicon
    EP0397576B1|1994-12-14|Functional elemental device and fet sensor provided with the same
    US4810350A|1989-03-07|Automotive, internal reference, solid electrolyte, lean oxygen sensor
    JP3244249B2|2002-01-07|Electrode for sensor
    JPH07146142A|1995-06-06|Angle-of-inclination sensor
    GB1505343A|1978-03-30|Electrochemical cells
    Van Dijk et al.1986|Study of the oxygen electrode reaction using mixed conducting oxide surface layers. Part I: Experimental methods and current-overvoltage experiments
    JP2564030B2|1996-12-18|Method for producing carbon thin film electrode for electrochemical measurement
    KR20000037745A|2000-07-05|Method for measuring a vacancy fault of a silicon wafer by using cu decoration technique
    Ward et al.1976|Kinetics of the Extended Growth of Anodic Oxide Films at Platinum in H 2 SO 4 Solution
    JP2943028B2|1999-08-30|pH measuring electrode and method for producing the same
    CN212321475U|2021-01-08|Transmission electron microscope high-resolution in-situ liquid phase temperature changing chip
    SU989422A1|1983-01-15|Humidity and temperature pickup
    KR102000882B1|2019-10-01|Preparation method of high sensitivity LaF3 thin film, the high sensitivity LaF3 thin film prepared thereby and sensor comprising the same
    同族专利:
    公开号 | 公开日
    DD227800B1|1987-08-19|
    NL8501760A|1986-03-03|
    JPS6154439A|1986-03-18|
    DD227800A1|1985-09-25|
    DE3521741A1|1986-02-20|
    GB2163457A|1986-02-26|
    GB8519889D0|1985-09-18|
    US4699806A|1987-10-13|
    GB2163457B|1987-12-31|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US3034924A|1958-10-30|1962-05-15|Balzers Patent Beteilig Ag|Use of a rare earth metal in vaporizing metals and metal oxides|
    US3147132A|1960-02-05|1964-09-01|Jenaer Glaswerk Schott & Gen|Method of preparing a multi-layer reflection reducing coating|
    US3657093A|1970-03-03|1972-04-18|Perkin Elmer Corp|Ion selective electrode for activity determination of cations which do not form as ionic semiconductors|
    SU474576A1|1972-12-14|1975-06-25|Московский Ордена Трудового Красного Знамени Инженерно-Физический Институт|Quartz sheeting|
    US4112157A|1973-06-18|1978-09-05|Siemens Aktiengesellschaft|Method of producing a film which promotes homeotropic orientation of liquid crystals and a liquid crystal utilizing the film|
    US4146309A|1978-03-10|1979-03-27|Bell Telephone Laboratories, Incorporated|Process for producing evaporated gold films|FR2600822A1|1986-06-24|1987-12-31|Elf Aquitaine|Field-effect transistor selective to fluoride ions and its method of manufacture|
    FR2616913A1|1987-06-18|1988-12-23|Elf Aquitaine|NOVEL MEMBRANE WITH SELECTIVE FIELD EFFECT ON METAL OR ORGANO-METALLIC IONS, METHOD FOR APPLYING THIS MEMBRANE ON THE TRANSISTOR|
    US4931172A|1988-06-02|1990-06-05|E. I. Du Pont De Nemours And Company|Fluoride ion-selective electrodes based upon superionic conducting ternary compounds and methods of making|
    JPH1112716A|1997-06-19|1999-01-19|Seiko Epson Corp|Material for brazing and its production|
    DE10218935C1|2002-04-27|2003-11-20|Prominent Dosiertechnik Gmbh|Fluoride-sensitive electrode for measuring the fluoride content of drinking water comprises a tubular electrode shaft, a lanthanum fluoride crystal, an inner electrolyte, and a deviating wire immersed in the electrolyte|
    KR101089623B1|2002-10-04|2011-12-06|더 리전츠 오브 더 유니버시티 오브 캘리포니아|Fluorine separation and generation device|
    DE102011089671A1|2011-12-22|2013-06-27|Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG|Reference half cell and electrochemical sensor with the reference half cell|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DD84266160A|DD227800B1|1984-08-10|1984-08-10|PROCESS FOR PREPARING A FLUOROIDSENSITIVE MEMBRANE|
    [返回顶部]